24LC256-I/SM, Последовательная энергонезависимая память …The 24LC256T-I/SM is a 256kB I?C CMOS serial Electrically Erasable Programmable Read-Only Memory (EEPROM) capable of operation across a broad voltage range 1.8 to 5.5V. It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also has a page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads up to the 256K boundary. Functional address lines allow up to eight devices on the same bus, for up to 2Mb address space., Low-power CMOS technology, 2-wire serial interface (I?C™ compatible), Cascadable for up to eight devices, Self-timed erase/write cycle, 5ms Maximum write cycle time, Hardware write-protect for entire array, Output slope control to eliminate ground bounce, Schmitt trigger inputs for noise suppression, 1000000 Erase/write cycles, Electrostatic discharge protection >4000V, Data retention >200 years
