Manufacturer NXP Product Category RF MOSFET Transistors RoHS Details Id — Continuous Drain Current 200 mA Vds — Drain-Source Breakdown Voltage 65 V Rds On — Drain-Source Resistance 300 mOhms Transistor Polarity N-Channel Frequency 1.3 GHz Vgs — Gate-Source Breakdown Voltage 11 V Gain 19 dB Output Power 35 W Maximum Operating Temperature + 150 C Mounting Style SMDSMT Package Case SOT-467C-3 Packaging Tube Brand NXP Semiconductors Factory Pack Quantity 60 Vgs th — Gate-Source Threshold Voltage 1.9 V Year of manufacture 2015
