Категория продукта: Биполярные транзисторы с изолированным затвором (I, Подкатегория: IGBTs, Размер фабричной упаковки: 1, Технология: Si, Тип продукта: IGBT Transistors, Торговая марка: Microchip / Microsemi, Упаковка: Tube, Base Product Number: APT36GA60 ->, Current - Collector (Ic) (Max): 65A, Current - Collector Pulsed (Icm): 109A, ECCN: EAR99, Gate Charge: 18nC, HTSUS: 8541.29.0095, IGBT Type: PT, Input Type: Standard, Moisture Sensitivity Level (MSL): 1 (Unlimited), Mounting Type: Through Hole, Operating Temperature: -55В°C ~ 150В°C (TJ), Package: Tube, Package / Case: TO-247-3, Power - Max: 290W, REACH Status: REACH Unaffected, RoHS Status: RoHS Compliant, Series: POWER MOS 8в„ў ->, Supplier Device Package: TO-247 [B], Switching Energy: 307ВµJ (on), 254ВµJ (off), Td (on/off) @ 25В°C: 16ns/122ns, Test Condition: 400V, 20A, 10Ohm, 15V, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Voltage - Collector Emitter Breakdown (Max): 600V, Бренд: Microchip Technology
