Maximum Operating Temperature: +150 °C, Number of Elements per Chip: 1, Length: 3.04мм, Brand: ON Semiconductor, Package Type: SOT-23, Maximum Power Dissipation: 225 мВт, Mounting Type: Поверхностный монтаж, Минимальная рабочая температура: -55 °C, Width: 1.4мм, Высота: 1.01мм, Pin Count: 3, Dimensions: 3.04 x 1.4 x 1.01мм, Automotive Standard: AEC-Q101, Количество элементов на ИС: 1, Максимальное рассеяние мощности: 225 мВт, Тип корпуса: SOT-23, Тип монтажа: Поверхностный монтаж, Число контактов: 3, Automotive: No, Channel Mode: Enhancement, Channel Type: N, Configuration: Single, ECCN (US): EAR99, EU RoHS: Compliant, Lead Shape: Gull-wing, Maximum Continuous Drain Current (A): 0.17, Maximum Drain Source Resistance (mOhm): 6000 10V, Maximum Drain Source Voltage (V): 100, Maximum Gate Source Leakage Current (nA): 50, Maximum Gate Source Voltage (V): ±20, Maximum Gate Threshold Voltage (V): 2, Maximum IDSS (uA): 1, Maximum Operating Temperature (°C): 150, Maximum Power Dissipation (mW): 360, Minimum Operating Temperature (°C): -55, Mounting: Surface Mount, Packaging: Tape and Reel, Part Status: Active, PCB changed: 3, PPAP: No, Product Category: Power MOSFET, Standard Package Name: SOT, Supplier Package: SOT-23, Typical Fall Time (ns): 5.6, Typical Gate Charge @ 10V (nC): 0.793, Typical Gate Charge @ Vgs (nC): 0.793 10V, Typical Input Capacitance @ Vds (pF): 21.5 25V, Typical Rise Time (ns): 1.7, Typical Turn-Off Delay Time (ns): 5.9, Typical Turn-On Delay Time (ns): 2.2, Вес, г: 0.02, Бренд: ON SEMICONDUCTOR CORPORATION
