Base Product Number: DMN67 ->, Current - Continuous Drain (Id) @ 25В°C: 210mA (Ta), Drain to Source Voltage (Vdss): 60V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, ECCN: EAR99, FET Type: N-Channel, Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V, HTSUS: 8541.21.0095, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V, Moisture Sensitivity Level (MSL): 1 (Unlimited), Mounting Type: Surface Mount, Operating Temperature: -55В°C ~ 150В°C (TJ), Package: Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®, Package / Case: TO-236-3, SC-59, SOT-23-3, Power Dissipation (Max): 340mW (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, REACH Status: REACH Unaffected, RoHS Status: ROHS3 Compliant, Supplier Device Package: SOT-23, Technology: MOSFET (Metal Oxide), Vgs (Max): В±30V, Vgs(th) (Max) @ Id: 2.5V @ 250ВµA, Continuous Drain Current (Id) @ 25В°C: 210mA, Power Dissipation-Max (Ta=25В°C): 340mW, Rds On - Drain-Source Resistance: 5О© @ 500mA,10V, Transistor Polarity: N Channel, Vds - Drain-Source Breakdown Voltage: 60V, Vgs - Gate-Source Voltage: 2.5V @ 250uA, Brand: Diodes Incorporated, Channel Mode: Enhancement, Configuration: Single, Factory Pack Quantity: 3000, Fall Time: 5.6 ns, Forward Transconductance - Min: 80 mS, Id - Continuous Drain Current: 210 mA, Manufacturer: Diodes Incorporated, Maximum Operating Temperature: +150 C, Minimum Operating Temperature: -55 C, Mounting Style: SMD/SMT, Number Of Channels: 1 Channel, Packaging: Cut Tape or Reel, Pd - Power Dissipation: 340 mW, Product Category: MOSFET, Product Type: MOSFET, Qg - Gate Charge: 821 pC, Rise Time: 3 ns, Series: DMN67, Subcategory: MOSFETs, Transistor Type: 1 N-Channel, Typical Turn-Off Delay Time: 7.6 ns, Typical Turn-On Delay Time: 2.8 ns, Vgs Th - Gate-Source Threshold Voltage: 1 V, Вес, г: 0.01, Бренд: DIODES INC.
