Maximum Operating Temperature: +175 °C, Number of Elements per Chip: 1, Length: 10.3мм, Transistor Configuration: Одинарный, Brand: Nexperia, Maximum Continuous Drain Current: 50 A, Package Type: D2PAK (TO-263), Maximum Power Dissipation: 86 W, Mounting Type: Поверхностный монтаж, Minimum Operating Temperature: -55 °C, Width: 11мм, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Height: 4.5мм, Maximum Drain Source Resistance: 23.7 m?, Maximum Drain Source Voltage: 60 В, Pin Count: 3, Typical Gate Charge @ Vgs: 20.9 nC @ 10 V, Transistor Material: Si, Channel Mode: Enhancement, Channel Type: N, Maximum Gate Source Voltage: -20 V, +20 V, Вес, г: 1, Бренд: Nexperia B.V.
