Категория продукта: Биполярные транзисторы с изолированным затвором (I, Подкатегория: IGBTs, Размер фабричной упаковки: 1, Технология: Si, Тип продукта: IGBT Transistors, Торговая марка: Microsemi, Упаковка: Tube, Base Product Number: APT50GN120 ->, Current - Collector (Ic) (Max): 134A, Current - Collector Pulsed (Icm): 150A, ECCN: EAR99, Gate Charge: 315nC, HTSUS: 8541.29.0095, IGBT Type: NPT, Trench Field Stop, Input Type: Standard, Moisture Sensitivity Level (MSL): 1 (Unlimited), Mounting Type: Through Hole, Operating Temperature: -55В°C ~ 150В°C (TJ), Package: Tube, Package / Case: TO-247-3 Variant, Power - Max: 543W, REACH Status: REACH Unaffected, RoHS Status: RoHS Compliant, Switching Energy: 4495ВµJ (off), Td (on/off) @ 25В°C: 28ns/320ns, Test Condition: 800V, 50A, 2.2Ohm, 15V, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Voltage - Collector Emitter Breakdown (Max): 1200V, Бренд: Microchip Technology
