Base Product Number: APT80GA90 ->, Current - Collector (Ic) (Max): 145A, Current - Collector Pulsed (Icm): 239A, ECCN: EAR99, Gate Charge: 200nC, HTSUS: 8541.29.0095, IGBT Type: PT, Input Type: Standard, Moisture Sensitivity Level (MSL): 1 (Unlimited), Mounting Type: Through Hole, Operating Temperature: -55В°C ~ 150В°C (TJ), Package: Tube, Package / Case: TO-247-3, Power - Max: 625W, REACH Status: REACH Unaffected, RoHS Status: RoHS Compliant, Supplier Device Package: TO-247 [B], Switching Energy: 1652ВµJ (on), 1389ВµJ (off), Td (on/off) @ 25В°C: 18ns/149ns, Test Condition: 600V, 47A, 4.7Ohm, 15V, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A, Voltage - Collector Emitter Breakdown (Max): 900V, Вид монтажа: Through Hole, Категория продукта: Биполярные транзисторы с изолированным затвором (I, Подкатегория: IGBTs, Размер фабричной упаковки: 1, Технология: Si, Тип продукта: IGBT Transistors, Торговая марка: Microsemi, Упаковка: Tube, Упаковка / блок: TO-247-3, Бренд: Microchip Technology
