Base Product Number: APT80GA90 ->, Current - Collector (Ic) (Max): 145A, Current - Collector Pulsed (Icm): 239A, ECCN: EAR99, Gate Charge: 200nC, HTSUS: 8541.29.0095, IGBT Type: PT, Input Type: Standard, Moisture Sensitivity Level (MSL): 1 (Unlimited), Mounting Type: Surface Mount, Operating Temperature: -55В°C ~ 150В°C (TJ), Package: Tube, Package / Case: TO-268-3, DВіPak (2 Leads + Tab), TO-268AA, Power - Max: 625W, Series: POWER MOS 8В® ->, Supplier Device Package: D3PAK, Switching Energy: 1.625mJ (on), 1.389mJ (off), Td (on/off) @ 25В°C: 18ns/149ns, Test Condition: 600V, 47A, 4.7Ohm, 15V, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A, Voltage - Collector Emitter Breakdown (Max): 900V, Бренд: Microchip Technology
